发明名称 Method and apparatus to program both sides of a non-volatile static random access memory
摘要 A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
申请公布号 US7518916(B2) 申请公布日期 2009.04.14
申请号 US20060644819 申请日期 2006.12.22
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 ASHOKKUMAR JAYANT;STILL DAVID W.;ALLAN JAMES D.;GILL JOHN ROGER
分类号 G11C16/04 主分类号 G11C16/04
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