Multilayer gallium arsenide semiconductor - for laser diode

摘要

Prodn. of a semiconductor diode contg. a series of epitaxially formed layers of n-GaAs - n - GaHAs - GaAs - p - GaHAs - p - GaAs is improved by forming a supernumerary layer, pref. GaAlAs, and finally etching it away, pref. with hydrochloric acid. By this method, the formation of the p - GaAs layer which must be very thin (0.005 mm) is facilitated, compared with the conventional method of allowing it to grow thicker and then grinding to the required thickness.