发明名称 PHOTOCONDUCTIVE DEVICE AND METHOD OF MANUFACTURE
摘要 1371013 Photoconductors PHOTOPHYSICS Inc 17 April 1973 18577/73 Heading H1K Crystals of a II-VI compound photoconductor such as CdS (Zn, Se and Te are also mentioned) have introduced therein a halogen donor dopant. The crystals are then pulverized and the donor concentration is determined, e.g. by determining the turbidity produced when a solution of AgNO 3 is added to a solution of the crystals in HNO 3 . A measured quantity of an acceptor dopant from the group Ag, Au and Cu sufficient to produce a desired donor/ acceptor ratio in the photoconductor is then added, e.g. by suspension of the pulverized crystals in an aqueous copper sulphate solution. The crystals are then mixed with a glass binder, painted or sprayed on to a tin oxide coated glass substrate and fired for 10-60 minutes at 525-650‹ C., after which a longer ageing treatment at 80‹ C. is carried out. The original donor-doped crystals are preferably obtained by sublimation in the presence of a donor containing vapour such as HC1.
申请公布号 GB1371013(A) 申请公布日期 1974.10.23
申请号 GB19730018577 申请日期 1973.04.17
申请人 PHOTOPHYSICS INC 发明人
分类号 H01L31/18;(IPC1-7):H01L15/06 主分类号 H01L31/18
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