| 摘要 |
A luminescent diode comprises a p+type substrate, at least one electron-hole recombination unit consisting of a p-type layer of a certain band gap and an n-type layer of a wider band gap epitaxially grown on said p-type layer to form a hetero junction at the interface therebetween, and a low resistivity contact disposed on an outermost surface of said unit opposite to said substrate. In the unit, said p-type layer is positioned closer to said substrate than said n-type layer. Light emitted in the vicinity of the hetero junction in the p-type layer of the unit is transmitted through this hetero junction and the n-type layer to emit from the outermost surface of the unit. |
