| 摘要 |
PURPOSE:To make the crystal grain diameter lage by providing a low absorption region relative to a beam energy by a first beam annealing, and causing a recrystallization to begin from the central part of the beam by a second beam annealing for recrystallization. CONSTITUTION:When an Ar laser beam is radiated to the a-Si of a semiconductor film 2 with an energy density that the a-Si does not melt, and is scanned in a scanning direction 6, then a low absorption region 3 is formed in the semiconductor film 2. Then, the semiconductor film 2 is fused and recrystallized by an beam energy 4. That is, when the beam energy 4 is scanned in the scanning direction 6 to perform the recrystallization, it is done so as to include at least one low absorption region 3. As a result, the low absorption region 3, because of this second beam annealing, has a temperature rise lower than the other portions. With this, the recrystallization begins from the low absorption region 3 which is the central part of the energy beam 4, and the crystal grain diameter becomes large.
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