| 摘要 |
PURPOSE:To obtain a photoelectric conversion device which has gains larger than one and so has high sensitivity and is thermally stable by applying an electric field to an amorphous semiconductor layer and operating this device so as to generate a charge multiplication action in a region mainly exclusive of a junction interface in the amorphous semiconductor layer. CONSTITUTION:This photoelectric conversion device is composed of a substrate 1, a signal readout electrode 2, a charge implantation suppressing layer 3, a photoconductive layer 4 inclusive of an amorphous semiconductor with a charge multiplication action, a layer 5 which has polarity opposite to that of the layer 3 and suppresses implantation of charges, and paired electrodes 6. The amorphous semiconductor layer is composed of mainly a tetrahedral group element which contains at least one element of hydrogen and halogen. Electrical junction structure which has property of suppressing the electrons implanted from outside is formed between the photoconductive layer 4 and an external electrode. An electric field is applied to the amorphous semiconductor layer and so the device is operated so as to generate a charge multiplication action in a region mainly exclusive of a junction interface in the amorphous semiconductor layer. Thus, an amorphous semiconductor light- receiving element, which has photoelectric conversion gains larger than one and is good in its light response characteristic and excellent in its heat-resisting performance, can be obtained.
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