| 摘要 |
PURPOSE:To form a high quality CVD film at a high speed by a method wherein reactive gas blow outlets and the surface of a substrate to be treated are placed in a domain from the position in contact with an electron cyclotron resonance region to the position in the resonance region. CONSTITUTION:The microwave plasma CVD film forming equipment of the present invention is composed of a plasma generating chamber 10, a sample chamber 11 in which a substrate 17 to be treated is placed, gas blow outlets 20 from which reactive gas is blown against the surface of the substrate to be treated and a magnetic coil 16 provided on the outer circumference of the plasma generating chamber 10. The gas blow outlets 20 are provided in a domain from the position in contact with an electron cyclotron resonance region created by a microwave to the position in the resonance region. With this constitution, as the plasma density is the highest in the electron cyclotron resonance region so that the efficiency of ionizing the reactive gas is the highest in the region, the maximum deposition rate of the CVD film can be obtained and its film quality can be precise.
|
