SEMICONDUCTOR DEVICE COMPRISING A SUBSTRATE, AND PRODUCTION METHOD THEREOF

摘要

A semiconductor device is produced through processes that; ionized material is poured into a predetermined depth of a silicon substrate (51) so as to be made into etching stopper layer (52), a predetermined area of the silicon substrate is etched up to the depth of the etching stopper layer so as to form a concave portion (54), a compound semiconductor chip (55) is accommodated in the concave portion, insulating film (56) is formed covering a space between the surrounding wall of the concave portion and the side wall of the compound semiconductor chip so as to be patterned, and that a second thin film circuit (57) is so formed on the patterned insulating film as to connect between the electrodes on the compound semiconductor chip and a first thin film circuit (60) which is previously formed on the surface of the silicon substrate.