发明名称 SOLID IMAGE SENSING DEVICE WITH CUTTING LAYER USING POLYSILICON
摘要 The manufacturing process of the CCD with a cutting layer using the polysilicon has the following steps of : (a) forming a P well (2) and P well (3) by implanting the boron on the n-type silicon substrate (1); (b) depositing a metal film after forming a channel stop region (6) and a photodiode (8), burried channel and the first, second polysilicon in sequence ; (c) forming a insulated layer between the photocells by etching the polysilicon (10) deposited on SiO2 layer after forming the channel stop region (6).
申请公布号 KR890004985(B1) 申请公布日期 1989.12.02
申请号 KR19870006379 申请日期 1987.06.23
申请人 SAMSUNG ELECTRONICS CO.LTD. 发明人 YUN CHONG-WOO
分类号 H01L31/00;(IPC1-7):H01L31/00 主分类号 H01L31/00
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