| 摘要 |
The invention is a ultra-fast, high frequency, high temperature rectifying diode formed in silicon carbide that comprises a monocrystalline silicon carbide substrate having a sufficient carrier concentration to give the substrate a first conductivity type, a first monocrystalline epitaxial layer of silicon carbide upon the substrate and having the same conductivity type as the substrate, and a second monocrystalline epitaxial layer of silicon carbide upon the first epitaxial layer and having the opposite conductivity type from the first epitaxial layer. One of the epitaxial layers has a carrier concentration greater than the carrier concentration of the other epitaxial layer, so that the layer with the lesser concentration is predominantly depleted at reverse bias. The first and second epitaxial layers form an abrupt p-n junction.
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