发明名称 EEPROM memory system having selectable programming voltage for low power readability
摘要 A memory system for the non-volatile storage of digital information. The digital storage element is a semiconductor memory cell which is electrically erasable, readable, and programmable. There is a low voltage read mode provided to decrease system power requirements.
申请公布号 US5153854(A) 申请公布日期 1992.10.06
申请号 US19910707975 申请日期 1991.05.23
申请人 MOTOROLA, INC. 发明人 HEROLD, BARRY W.
分类号 G11C16/04;G11C16/08;G11C16/10;G11C16/14;G11C16/26 主分类号 G11C16/04
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