Nonvolatile memory device and method for manufacturing the same

摘要

A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.

主权项

1. A nonvolatile memory device comprising:
an insulating layer; a plurality of oxygen diffusion prevention layers disposed on the insulating layer; a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer; and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs, wherein each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements, and wherein each of the plurality of the resistance-variable elements includes:
a first electrode;a second electrode disposed above the first electrode; anda resistance-variable layer which is disposed between the first electrode and the second electrode, and resistance value of the resistance-variable layer changing reversibly on the basis of an electrical signal provided between the first electrode and the second electrode.