| 摘要 |
PURPOSE:To obtain a resist pattern high in resolution and heat resistance with high sensitivity and high developability by incorporating at least each one of an alkali-soluble resin, and a quinonediazido compound, and a specified compound. CONSTITUTION:The photoresist composition comprises each at least one of the alkali-soluble resins and the quinonediazido compounds and the compounds represented by formula I in which R is a single bond or optionally substituted 1-10C alkyl or the like; each of R1-R5 is, independently, II, halogen, nitro, cyano, optionally substituted aryl or the like; each of l-t is 0, 1, 2, or 3, but 1 <=(l+m+n+o)>=12. The polyhydroxy compound can be obtained by condensing an optionally substituted phenol with an aldehyde by J. E. Driver method and the like. |
