发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD |
摘要 |
A static RAM exhibiting a high reliability and suited to a higher density of integration is disclosed. In each memory cell of this static RAM, the cross coupling of a flip-flop circuit is made by gate electrodes of MISFETs constituting this flip-flop circuit. In addition, a source line is formed by the same step as that of a word line. A resistance value of a polycrystalline silicon layer which is a load resistor is changed in accordance with information to be stored. Furthermore, semiconductor regions for preventing soft errors attributed to alpha particles etc. are formed under the MISFETs constituting the flip-flop circuit, so that the channels are not adversely affected. |
申请公布号 |
KR940002772(B1) |
申请公布日期 |
1994.04.02 |
申请号 |
KR19850005816 |
申请日期 |
1985.08.13 |
申请人 |
HITACHI LTD. |
发明人 |
IKEDA, SHUJI;NAKASAWA, YUICHI;MEGURO, SATOSHI;YAMAMOTO, SHO |
分类号 |
G11C11/412;H01L21/8244;H01L23/528;H01L27/11;(IPC1-7):H01L29/78 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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