Semiconductor devices

摘要

Some embodiments include a device having an n-type diffusion region, and having a boron-doped region within the n-type diffusion region. The boron-doped region extends no deeper than about 10 nanometers from an upper surface of the n-type diffusion region. Some embodiments include a method in which first boron-enhanced regions are formed within upper portions of n-type source/drain regions of an NMOS (n-type metal-oxide-semiconductor) device and second boron-enhanced regions are simultaneously formed within upper portions of p-type source/drain regions of a PMOS (p-type metal-oxide-semiconductor) device. The first and second boron-enhanced regions extend to depths of less than or equal to about 10 nanometers.

主权项

1. A device, comprising:
an n-type region; a dielectric structure over an upper surface of the n-type region, the dielectric structure comprising an opening to define a side surface of the dielectric structure and to expose a part of the upper surface of the n-type region, said part of the upper surface of the n-type region being beneath a bottom surface of the dielectric structure; a first boron-containing region along an upper portion of the n-type region; and a second boron-containing region extending from the side-surface of the dielectric structure to an inside of the dielectric structure, but not extending entirely through the dielectric structure; the second boron-containing region extending continuously to the first boron-containing region, wherein the first and second boron-containing regions are substantially the same in boron concentration as each other.