| 摘要 |
The method includes the steps of depositing an Al film (22) on the semiconductor substrate (21) on which circuit elements are formed, depositing a Cr film (23) on the film (22), coating a photoresist layer (24) thereon to form a metal wiring and an Al pad using wiring and pad masks, removing the layer (24) to apply a covering layer (25) of PSG or PiQ thereon to remove and expose the passivation layer of pad portion (30) using a photo-etching process, depositing and annealing a Cu layer (26) thereon to apply a pholoresist layer (27) thereon to form a bumper hole to fill the hole with Pb/Sn plug (28) to form a bumper, and removing the layer (27) and the exposed layer (26) to reflow the bumper, thereby protecting the passivation film and Al pad upon removing of the Cu and Cr films.
|
