Process for surface treatment of metallic material for semiconductor manufacturing equipment

摘要

A process for surface treatment of metal material for semiconductor mfg. installations comprises: (a) carrying out of cathodic electrolysis on a metallic material in an aq. soln. contg. chromic acid by which process a 0.005-10 mm thick layer of metallic chromium and/or chromium cpd. is formed on the surface of the metallic material; and (b) heating of the metallic material in a vacuum at 10<-8>-10<0> deg. Torr (1.33 x 10<-6> - 133 Pa) or in an environment contg. oxygen at a low partial pressure which corresponds to the oxygen activity in the vacuum. Chromium oxide is at least formed in the surface layer of the aforesaid metallic chromium layer or the chromium cpd. layer.