发明名称 Semiconductor structure and method for manufacturing the same
摘要 A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises an access device, a dielectric layer, a barrier layer, a first interlayer conductor, a first barrier liner, a second interlayer conductor, a second barrier liner, a memory element and a top electrode layer. The access device has two terminals. The dielectric layer covers the access device. The barrier layer is disposed on the dielectric layer. The first and second interlayer conductors are connected to the two terminals, respectively. The first and second barrier liners are disposed on sidewalls of the first and second interlayer conductors, respectively. The memory element is disposed on the first interlayer conductor. The top electrode layer is disposed on the barrier layer and the memory element and covers the memory element.
申请公布号 US9455403(B1) 申请公布日期 2016.09.27
申请号 US201514838500 申请日期 2015.08.28
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lai Erh-Kun;Lee Feng-Min;Lin Yu-Yu;Lee Dai-Ying
分类号 H01L27/24;H01L45/00 主分类号 H01L27/24
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor structure, comprising: an access device having two terminals; a dielectric layer covering the access device; a barrier layer disposed on the dielectric layer; a first interlayer conductor extending through the barrier layer and the dielectric layer, wherein the first interlayer conductor is connected to one of the two terminals; a first barrier liner disposed on a sidewall of the first interlayer conductor, wherein the first interlayer conductor is physically separated from the dielectric layer by the first barrier liner; a second interlayer conductor extending through the barrier layer and the dielectric layer, wherein the second interlayer conductor is connected to the other one of the two terminals; a second barrier liner disposed on a sidewall of the second interlayer conductor, wherein the second interlayer conductor is physically separated from the dielectric layer by the second barrier liner; a memory element disposed on the first interlayer conductor; and a top electrode layer disposed on the barrier layer and the memory element, the top electrode layer covering the memory element.
地址 Hsinchu TW