发明名称 PHASE SHIFT MASK AND PREPARATION THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To prevent production of pattern errors by forming a conductive transparent layer on a transparent substrate, forming plural light-shielding layers with a specified interval on the conductive transparent layer, and forming a hemispheric shifter between a pair of light-shielding layers in such a manner that the shifter has a flat upper face and a round side face. SOLUTION: A conductive transparent layer 10 is formed by vapor deposition on a transparent substrate 1, on which a square shifter comprising an inorg. photosensitive agent 19 doped with silver is formed. Further, the square shifter is heat-treated to form a hemispheric shifter 21. A second inorg. photosensitive agent 17 is applied on the whole surface of the conductive transparent layer 10 including the hemispheric shifter 21. Then, the second inorg. photosensitive agent 17 is ground till a part of the surface of the hemispheric shifter 21 is ground. Then, the second inorg. photosensitive agent 17 remaining is removed by using an alkali developer to form a shifter 22 having a flat upper face and a round side face. Thereby, the shifter 22 on the front and back surface maintains a hemispheric state of the side wall where no inorg. photosensitive agent 19 (light-shielding layer) doped with silver is deposited.</p>
申请公布号 JPH0990602(A) 申请公布日期 1997.04.04
申请号 JP19960067438 申请日期 1996.02.29
申请人 L JII SEMICON CO LTD 发明人 ZUN SOKU RI
分类号 G03F1/26;G03F1/30;G03F1/34;G03F1/56;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/26
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