The process has a metal layer (a) bonded to a ceramic layer (c) via an intermediate layer formed by various concentrations of metal and ceramic mixture. The relative concentrations of metal and ceramic change from 100 % to zero in a smooth relationship over an intermediate layer of the order of one micron. The process can be applied to various combinations of metals and ceramic/insulators to form a stress relieved junction. The layers are formed by plasma processes and the selected concentration variation through the intermediate layer follows a smooth characteristic (2,3).
