| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer wiring construction, and a semiconductor device provided with this multilayer wiring construction, having an upper wiring layer formed on a polyimide resin film pattern capable of removing the protrusions and swellings in the pattern edge part of a polyimide resin film. SOLUTION: This device is manufactured by forming an upper wiring layer 12 on a polyimide resin film pattern obtained by forming a polyimide resin film 4 on a substrate 1, wet-etching the polyimide resin film with an alkaline aqueous solution using a positive resist 7 as a masking material, exfoliating the positive resist 7 with an organic solvent after that, and furthermore wet- etching the polyimide resin film 4 additionally. |
