| 摘要 |
A light-transmitted region(A) and a light-non-transmitted region(B) are set by getting photoresist film(2) to be patterned with an electron beam. An etching groove is formed by anisotropic etching of the light-transmitted region. After the first photoresist film is removed, a second photoresist film(4) is spreaded on an upper part of the quartz substrate. Then, the second photoresist film is etched, a baked photoresist film(4A) being formed by a baked process. After that, a third photoresist film(5) is spreaded on an upper part of a whole structure and a patterned third photoresist film(5A) being formed which is patterned by development of exposure part of the third photoresist film. Cr(6) is deposited on a surface of the quartz substrate exposed to the light-non-transmitted region and a surface of the baked photoresist film exposed to the light-transmitted region.
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