发明名称 METAL OXIDE THIN FILM POSITIVE PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a forming method of a metal oxide thin film positive pattern composed of a sharp pattern. SOLUTION: The metal oxide thin film pattern forming method comprises forming the pattern by exposing a coating film formed by using a metal oxide thin film pattern forming composition, which consists of a metal oxide thin film forming composition and a photosensitizer and causes the difference in the reaction with a solvent by light irradiation, with irradiation active beam to form an image, and developing with the solvent. A positive pattern is formed by using water as the solvent with >5mj/cm<2> to <100mj/cm<2> irradiation energy for image forming exposure. The photosensitizer consists of one or more kinds selected from a group composed of nitrobenzyl alcohols, nitrobenzaldehydes, nitrostyrols, nitroacetophenone, nitroanisols and nitrofurans, if necessary the coating film after developed is heat treated and the irradiation active beam used for the image forming exposure is one of ultraviolet ray, electron beam, X-ray or ion beam.
申请公布号 JPH09263969(A) 申请公布日期 1997.10.07
申请号 JP19960076738 申请日期 1996.03.29
申请人 MITSUBISHI MATERIALS CORP 发明人 KAGEYAMA KENSUKE;OGI KATSUMI
分类号 G03F7/039;C01G1/02;C23C18/12;C23C26/00;C23C28/00;H01L21/027;(IPC1-7):C23C28/00 主分类号 G03F7/039
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