MEMORY CELL TRANSISTOR, METHOD FOR MANUFACTURING IT, AND NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a split gate type memory cell transistor of long life, uniform characteristics, and high performance. SOLUTION: At a gate insulation film 6 on a source area 3, an opening part 6a is formed. A floating gate electrode 7 is formed of a single-crystal silicon film having the same crystal plain orientation as a single-crystal silicon substrate 2. Thus, the crystal plain orientations of floating gate electrodes 7 in all the memory cells 41 are constant, so, the electric characteristics of a tunnel insulation film 8 on each floating gate electrode 7 is also constant. Therefore, the electric characteristics of memory cells 1 have no dispersion, resulting in uniform characteristics in all the memory cells 41. In order to form a single-crystal silicon film, an amorphous silicon film is formed on the gate insulation film 6, then with the single-crystal silicon substrate 2 exposed from the opening part 6a as a seed, re-crystallization of the amorphous silicon film with a solid-phase epitaxi is performed.