| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an electrostatic chuck which generates a suction force composed mainly of Johnson-Rahbeck's force, which enhances the suction characteristic of wafer, which quickly removes the charging of the wafer, whose separation responsivity is increased and which restrains duct particles from being stuck by a method wherein a dielectric layer is formed of single-crystal alumina which is doped with a transition metal. SOLUTION: The surface of a dielectric layer 3 is used as a suction face, an electrode 5 for electrostatic suction is formed on the rear surface 3b, and the dielectric layer 3 is formed of single-crystal alumina which is doped with a transition metal. A base substrate 4 is fixed to the rear surface 3b of the dielectric layer 3 via a bonding agent 6, a sheetlike body 2 is constituted, and the electrode 5 for electrostatic suction is built in the inside. Through a power-supply terminal 7 which is bonded to an electrode extraction hole 4c formed in the base substrate 4 in order to electrify the electrode 5, a DC voltage is applied across the electrode 5 and a semiconductor wafer 10 which is mounted on the suction face 3a, a suction force which is composed mainly of Johnson-Rahbeck's force is generated between the wafer 10 and the suction face 3a by a very small leakage current, and the wafer 10 can be sucked and held with high accuracy.</p> |
