SELF-ALIGNED DOUBLE POLYSILICON BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a self-aligned double polysilicon bipolar transistor, in which an intrinsic base region is unaffected and a link-up region can be formed independently, and a manufacturing method thereof. SOLUTION: An L-shaped first spacer 103 made of polysilicon is formed in an inner wall of a first polysilicon pattern 102 as a base lead, and a link-up region 112 is formed in an epitaxial layer 100 by laterally diffusing impurity in the first polysilicon pattern 102 via the first spacer 103.