| 摘要 |
PROBLEM TO BE SOLVED: To lower the source inductance by bonding a MESFET by flip chip method to improve the heat radiation and facilitate the mounting process. SOLUTION: Source electrode pads 3, gate electrode relay pads 4 and drain electrode relay pads 5 are formed on an active element face of a substrate, the relay pads 4, 5 are connected to gate electrode pads 7 and drain electrode pads 8 on the substrate back surface through vias, FET chip 1 is mounted on a package heat sink 16 by the face down method, gate electrode pads 7 are connected to input electrodes 11 on an input circuit board 13 through bonding wires 15 and drain electrode pads 8 are connected to output electrodes 12 on an output circuit board 14 through bonding wires 15. |
