| 摘要 |
<p>A method for reducing an adverse effect on the shape of a resist caused by morphological properties or acidity of the surface of a substrate for a chemical amplification resist or the like used as a photoresist, in a process for producing an integrated circuit element by photolithography, which comprises applying, on a substrate having thereon a reflection reducing coating such as SiON, a substrate treating agent composition comprising a solution containing a salt of at least one basic compound selected from among a primary, secondary or tertiary amine and a nitrogen-containing heterocyclic compound with an organic acid such as a sulfonic acid or a carboxylic acid, baking the coated substrate, and optionally washing the substrate, and then applying a chemical amplification resist or the like on the resultant substrate, subjecting to exposure and development, to thereby form a resist pattern; and a substrate-treating agent composition to be used in the method.</p> |
