SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided not to continuously supply a refresh command from outside upon a continuous refresh operation in order to reduce electric power consumption. CONSTITUTION: After a refresh operation is performed by an outer refresh command, an inner refresh command(iREF) is generated by an inner refresh command generator(14) based on a burst length. An outer refresh command(REF) and an inner refresh command(iREF) generate and increase an inner address by being transmitted to a counter(10) via a NOR-gate(23). A burst counter(16) counts the generated number of the outer or inner refresh command and generates the inner refresh command as long as the burst length. Further, the burst counter controls the generation of the inner refresh command by generating a BST-endb signal and disabling a refresh enable signal.