发明名称 SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TRANSFER APPARATUS, AND SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To shorten a substrate treatment cycle, and increase the number of substrates to be treated per unit time by simultaneously carrying out operation for transferring substrates to be treated into a film-forming chamber, and operation for conveying treated substrates to a substrate preliminary chamber. SOLUTION: With a vacuum conveyance chamber T2 as a center, a film-forming chamber R and substrate preliminary chambers L/H are arranged coaxially. In the substrate preliminary chambers L/H, a slot H for accommodating substrates to be treated with a two-stage configuration, and a slot L for accommodating treated substrates are provided. In the vacuum transfer chamber T2, upper and lower arms 201 and 202 of the two-stage configuration are provided, being freely expandable and contractable, and simultaneously carry out straight-advance operations. While the lower arm 202 travels to the film-forming chamber R for receiving a treated substrate U2, the upper arm 201 travels to the substrate preliminary chambers L/H for receiving a substrate U1 to be treated. The substrate U1 to be treated is received by the upper arm 201, and the treated substrate U2 received by the lower arm 202 are transferred to the treatment chamber R and the slot L for accommodating treated substrates, respectively.
申请公布号 JP2000306978(A) 申请公布日期 2000.11.02
申请号 JP20000026703 申请日期 2000.02.03
申请人 KOKUSAI ELECTRIC CO LTD 发明人 OKAYAMA TOMOHIKO;ISHIDA TAKESHIGE;TAKEDA TOMOHIKO;ICHIMURA SATORU;SUZUKI KAZUNORI;YOSHINO AKIO;AKAO NORINOBU;AKITA YUKIO;KANAZAWA GENICHI;NAKAYAMA YASUNOBU
分类号 H01L21/302;H01L21/3065;H01L21/677;H01L21/687;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/302
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