SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND MANUFACTURE OF THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent warpage of a CSP(chip-scale package) semiconductor device and facilitate wiring within the semiconductor device. SOLUTION: A semiconductor element 12, which constitutes an integrated circuit, is formed on an element forming surface of a semiconductor chip 11. The element 12 is covered with a passivation film 13 made of silicon oxide or the like, which is a protection film, and the film 13 is covered with a first resin layer 14 for sealing. An electrode terminal 15 connected electrically to the element 12 is formed along the periphery on the element forming surface. A metallized wiring layer 16 connected electrically to the terminal 15 is provided at least along the periphery on the layer 14.