| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protection device dealing with the fineness of a semiconductor element constituting a semiconductor device. SOLUTION: The electrostatic protection device is provided with a MOSFET for a trigger and a MOSFET for high drive performance protection. When excessive voltage is applied on an input and output terminal 1, it is applied on drain dispersion layers 4, 4a, 11 through input and output wiring 2, and at first, the MOSFET for the trigger is operated. Next, the MOSFET for the protection is operated to generate ESD. The MOSFET for the trigger has a function of starting the MOSFET for the protection. In the case that the MOSFET for the trigger and the MOSFET for the protection are N-channel type MOS transistors, gate electrodes for triggers 5, 5a, source dispersion layers 6, 6a or the like are connected to earth potential. |
