THIN-FILM METAL BARRIER LAYER FOR ELECTRICAL INTERCONNECTION

摘要

PROBLEM TO BE SOLVED: To provide a metal diffusion barrier layer having excellent bonding properties to metals and dielectric materials. SOLUTION: An electrical interconnect structure where the TaN layer of a hexagonal phase is incorporated between a first material such as copper and a second one such as Al, W, and PbSn, and a barrier layer is disclosed. Additionally, the multiplayer of TaN of the hexagonal phase andαphase Ta is disclosed as the barrier layer. The problem that copper diffuses into a desired material to be separated during annealing at 50 deg.C can be solved.