METHOD FOR FORMING MULTI-LAYER WIRING OF SEMICONDUCTOR DEVICE TO SIMPLIFY FABRICATION PROCESS BY SIMULTANEOUSLY FORMING PLUG AND WIRING

摘要

PURPOSE: A method for forming a multi-layer wiring of a semiconductor device is provided to simplify a fabrication process by using copper to form simultaneously a plug and a wiring. CONSTITUTION: An insulating layer(20) is deposited on a semiconductor substrate(10). A first adhesion layer(40) is deposited into a contact hole. The contact hole is buried by copper. A copper wiring layer(50) is deposited on the first adhesion layer. A photoresist layer is laminated on the copper wiring layer corresponding to a position of the contact hole. A cross-shaped projected plug is formed on the copper wiring layer. The photoresist layer is removed therefrom. A second adhesion layer(70) is deposited on the copper wiring layer. The copper wiring layer is patterned. A nitride layer(90) is deposited on the entire surface of the second adhesion layer. An insulating layer(100) is formed on thereon. The insulating layer is planarized by using a CMP method.