发明名称 EXTREME ULTRA-VIOLET RAY RADIATION SOURCE, AND SEMICONDUCTOR EXPOSURE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a 13.5 nm wavelength ray radiation source which uses Sn as a radiation species allowing quick conveyance to a plasma generating place with excellent reproducibility, and restraining generation of harmful debris and condensation of vapor to the utmost. <P>SOLUTION: In this extreme ultraviolet ray radiation source using light emission of Sn ion, SnH<SB>4</SB>(mono-stannane) is supplied intermittently or continuously to a heating/excitation part, it is discharge-heated or laser-irradiation-heated to be excited, and plasma is generated thereby to radiate an extreme ultraviolet ray having a main wavelength of 13.5 nm. The Sn is supplied quickly to the heating/excitation part, by using the SnH<SB>4</SB>as a substance containing a radiation species, since the SnH<SB>4</SB>is gas all the time in an ordinary temperature because the SnH<SB>4</SB>has a melting point of -146&deg;C and a boiling point of -51.8&deg;C. The great portion of the Sn going out from the heating/excitation part is recoupled with H<SB>2</SB>to be returned to the original SnH<SB>4</SB>of high pressure, and generation of the debris is reduced thereby. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004279246(A) 申请公布日期 2004.10.07
申请号 JP20030071873 申请日期 2003.03.17
申请人 USHIO INC 发明人 HIRAMOTO TATSUMI;HOTTA KAZUAKI
分类号 G21K5/00;G03F7/20;G21K5/02;G21K5/08;H01L21/027;H05G2/00;H05H1/24 主分类号 G21K5/00
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