发明名称 |
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND SYSTEM FOR MANUFACTURING MAGNETORESISTIVE ELEMENT |
摘要 |
Manufacturing a magnetoresistive element excellent in RA and MR ratio is enabled. A method of manufacturing a magnetoresistive element of an embodiment includes forming a first laminate constituting a lower electrode on a base substrate, forming a second laminate which is a magnetoresistive effect laminate on the first laminate, and forming an upper electrode on the second laminate. The step of forming a first laminate includes forming a metal layer on the base substrate, forming a conductive amorphous layer on the metal layer, and performing ion etching on the conductive amorphous layer. |
申请公布号 |
US2017117460(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201615297467 |
申请日期 |
2016.10.19 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Imakita Kenichi |
分类号 |
H01L43/12;H01L43/02;H01L43/10 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a magnetoresistive element, comprising:
forming a first laminate on a base substrate, the first laminate configuring a lower electrode of the magnetoresistive element; forming a second laminate on the first laminate, the second laminate being a magnetoresistive effect laminate of the magnetoresistive element; and forming an upper electrode of the magnetoresistive element on the second laminate, wherein said forming a first laminate includes:
forming a metal layer on the base substrate;forming a conductive amorphous layer on the metal layer; andperforming ion etching on the conductive amorphous layer. |
地址 |
Tokyo JP |