发明名称 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND SYSTEM FOR MANUFACTURING MAGNETORESISTIVE ELEMENT
摘要 Manufacturing a magnetoresistive element excellent in RA and MR ratio is enabled. A method of manufacturing a magnetoresistive element of an embodiment includes forming a first laminate constituting a lower electrode on a base substrate, forming a second laminate which is a magnetoresistive effect laminate on the first laminate, and forming an upper electrode on the second laminate. The step of forming a first laminate includes forming a metal layer on the base substrate, forming a conductive amorphous layer on the metal layer, and performing ion etching on the conductive amorphous layer.
申请公布号 US2017117460(A1) 申请公布日期 2017.04.27
申请号 US201615297467 申请日期 2016.10.19
申请人 TOKYO ELECTRON LIMITED 发明人 Imakita Kenichi
分类号 H01L43/12;H01L43/02;H01L43/10 主分类号 H01L43/12
代理机构 代理人
主权项 1. A method of manufacturing a magnetoresistive element, comprising: forming a first laminate on a base substrate, the first laminate configuring a lower electrode of the magnetoresistive element; forming a second laminate on the first laminate, the second laminate being a magnetoresistive effect laminate of the magnetoresistive element; and forming an upper electrode of the magnetoresistive element on the second laminate, wherein said forming a first laminate includes: forming a metal layer on the base substrate;forming a conductive amorphous layer on the metal layer; andperforming ion etching on the conductive amorphous layer.
地址 Tokyo JP