| 发明名称 |
Overlay marks and semiconductor process using the overlay marks |
| 摘要 |
An overlay mark for determining the alignment between two separately generated patterns formed along with two successive layers above a substrate is provided in the present invention, wherein both the substrate and the overlay mark include at least two pattern zones having periodic structures with different orientations, and the periodic structures of the overlay mark are orthogonally overlapped with the periodic structures of the substrate. |
| 申请公布号 |
US9490217(B1) |
申请公布日期 |
2016.11.08 |
| 申请号 |
US201514687912 |
申请日期 |
2015.04.15 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Chia-Ching;Liou En-Chiuan;Wang Chia-Hung;Lee Sho-Shen |
| 分类号 |
H01L23/544;H01L21/68;H01L29/78 |
主分类号 |
H01L23/544 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. An overlay mark, formed along with two successive layers above a substrate, wherein both said substrate and said overlay mark comprise at least two pattern zones having periodic structures with different orientations, and said periodic structures of said overlay mark formed along with at least one of said two successive layers are orthogonally overlapped with said periodic structures of said substrate. |
| 地址 |
Hsin-Chu TW |
