| 摘要 |
A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming a first nitride-based semiconductor layer of AlxGa1-xN on a base; forming a second nitride-based semiconductor layer of AlyGa1-yN on the first nitride-based semiconductor layer; forming a third nitride-based semiconductor layer of AlzGa1-zN on the second nitride-based semiconductor layer; introducing an impurity using ion implantation into the first, second, and third nitride-based semiconductor layers; and thermally treating, after ion implantation, the first, second, and third nitride-based semiconductor layers, wherein the first, second, and third nitride-based semiconductor layers have respective Al composition ratios x, y, and z, and the Al composition ratio y of the second nitride-based semiconductor layer is higher than the Al composition ratio x of the first nitride-based semiconductor layer, and higher than the Al composition ratio z of the third nitride-based semiconductor layer. |
