| 摘要 |
<p>SILICON CHARGE-HANDLING DEVICE EMPLOYING SiC ELECTRODES A solid state imaging device is formed of a bulk of monocrystalline silicon which has been suitably doped. A transparent layer of SiO2 overlays the bulk silicon, and atop the SiO2 layer is at least one pattern of doped SiC electrodes. Successive patterns of SiC electrodes are insulated from each other by SiO2. The SiC and SiO2, being derivatives of silicon, passivate the bulk and serve, respectively, as transparent electrodes and transparent support for such electrodes.</p> |
