| 摘要 |
PURPOSE:To simplify an electrode forming process by coating a semiconductor wafer having PN junction by an insulating film such as SiO2 and Al2O3, opening a current injecting window, sequentially evaporating ohmic metal, one of Cr, Ti and Pt, and one metal of Au, Ag, and Al on the entire surface including the window, and performing heat treatment by one operation. CONSTITUTION:On an N type InP substrate 1, an N type InP buffer layer 2, an N type or P type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP ohmic contact layer 5 are laminated and grown. An SiO2 film 6 is deposited on the entire surface, and the current injecting hole is provided at the central part. Then, the Au/Zn layer 7 having ohmic property, the metal layer 8 using one of Cr, Ti, and Pt, and the metal layer 9 using one of Au, Ag, and Al are sequentially evaporated. Thereafter the heat treatment is performed. Then an Au/Ge electrode 10 is deposited. In this constitution, the process is simplified, and the manufacturing yield rate is enhanced. |
