| 摘要 |
PURPOSE:To prevent wiring of an upper layer from discontinuity by forming a contact electrode to nearly the same height as an insulation film around it. CONSTITUTION:An electrode contact aperture 6 is drilled in an SiO2 film 4 and a PSG film 5 on an Si substrate 1. Then an Si polycrystal layer 7 doped by n type impurity is formed on the whole surface of the substrate 1 to the thickness nearly the same as the total thickness of the film 4 and 5. Then a photoresistor film 9 is formed by applying negative type photoresistor liquid on the layer 7. Then the film 9 is exposed by using a photomask 11 which has a recess part 8 as light permeable part. After the developing process is applied to the exposed film 9, the film 9 is remained only in the recess part 8. Then the layer 7 is selectively removed by using the film 9 in the recess part 8 as a mask. At that time the surface of the layer 7 remained in the aperture 6 is made to be approximately in the same plane as the surface of the film 5 by controlling an extent of etching to be just enough to remove the layer 7 on the film 5 completely. Accordingly, when wiring 13 is formed after above procedure, unevenness of the wiring 13 is not caused and the danger of the generation of the failure such as discontinuity is eliminated. |
