发明名称 |
System on chip and temperature control method thereof |
摘要 |
A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level. |
申请公布号 |
US9459680(B2) |
申请公布日期 |
2016.10.04 |
申请号 |
US201313948691 |
申请日期 |
2013.07.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Kim Hyungock;Kim Wook;Seomun Jun;Oh Chungki;Jeon JaeHan;Do Kyungtae;Choi JungYun;Won Hyosig;Kim Kee Sup |
分类号 |
G06F1/32;G05D23/19;G06F1/20 |
主分类号 |
G06F1/32 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method of controlling a temperature of a semiconductor device, comprising:
detecting, by a temperature sensor, a temperature of the semiconductor device; activating a reverse body biasing operation in which, in response to determining that the detected temperature is greater than a first temperature level, a body bias voltage applied to a substrate of a function block of the semiconductor device is regulated; and activating a thermal throttling operation in which, in response to determining that the detected temperature is greater than a second level that is different than the first temperature level, at least one frequency of a driving clock is provided to the function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated. |
地址 |
Suwon-si KR |