MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To immerse the gaps of fine pattern securely in etching solution assuring the liquid phase etching conforming to the fine pattern by a method wherein a silicon wafer is immersed in water solution containing an interfacial activator before the silicon wafer is etched using HF-NH4F water solution. CONSTITUTION:Water solution mixed with 1-10% of interfacial activator is prepared to immerse a silicon wafer formed into photoresist mask of fine pattern therein. Firstly the wafer is lifted to be immersed in cleaning water for thoroughly cleaning the interfacial activator on the surface. Secondly the wafer is lifted again without being dried up to be immediately immersed in HF-NH4F group water solution for specific time etching process.