| 摘要 |
PURPOSE:To obtain the titled device easily manufactured with high withstand voltage and high reliability by preventing the breakage of an insulation film due to field concentration by a method wherein said device is so constructed that a field plate is not positioned on the outer peripheral end of an Si oxide containing negative interface charges under the neighborhood of the tip of the field plate. CONSTITUTION:A P<+> type semiconductor region 4 having an impurity concentration larger than that of an N type semiconductor region 3 is formed, and an N<+> type semiconducltor region 11 surrounding it in annular form is formed by impurity diffusion, and the surface of the substrate 1 is covered with a thermal oxide SiO2 film 5. An aperture 12 is provided in the SiO2 film 5 at a position distant from the exposed end of substrate surface of a P-N junction 8, and the Si oxide 9 generating negative charges of the order of 10<11>cm<-2> is formed on the surface of an N type region 3 by the treatment of hydrogen peroxide. After apertures 14 and 15 are formed in the regions 4 and 11, an electrode 6a, the field plate 6b, and an equipotential ring 6c are formed by Al evaporation. |
