| 摘要 |
The purpose of the present invention is to enhance forward properties (pressure resistance properties) of a silicon carbide semiconductor device by forming an impurity layer below schottky electrodes by a simple technique. In the present invention, a silicon carbide semiconductor device includes: an n-type semiconductor layer (2) formed on an n-type silicon carbide substrate (3); an n+-type impurity layer (4) formed over an entirety of the n-type semiconductor layer (2); and an anode electrode (1) formed partially on the n+-type impurity layer (4). Here, a concentration of impurities in the n+-type impurity layer (4) is higher than that of the n-type semiconductor layer (2), and the concentration of impurities in the n+-type impurity layer (4) is 1×1018 cm-3 or more. |
