| 摘要 |
PURPOSE:To construct MISFET gate electrodes similar to channels in the type of conductivity and stable in impurity concentration by a method wherein means for controlling the speeds of the diffusion of impurities are provided at the middle portions of the gate electrodes respectively belonging to an n-channel MISFET and p-channel MISFET. CONSTITUTION:On polycrystalline silicon films 5a located at the middle portions of the gate electrodes of MISFETs, masks 12 are formed. The masks 12 are for example formed of resist film or silicon oxide film whose etching rate is different from that of silicide. After the formation of the masks 12, by using the masks 12, silicide films 5B and silicide layers 7A, 8A are formed on top of the conductive polycrystalline silicon films 5a, on the primary surfaces of semiconductor substrates 1 on both sides of the conductive layers 5a, and on the primary surfaces of well regions 2. The masks 12 are removed, and diffusion speed controlling sections 6, free of the silicide film 5B, are formed on the polycrystalline silicon films 5a. The silicide films 5B are formed, for example, by activation after introduction of silicon ions into molybdenum films formed by spattering. |
