| 摘要 |
PURPOSE:To inhibit the variation of the quantity of a reference signal stored in a capacitance element for deciding informations in a dummy cell, to prevent a malfunction and to improve electrical reliability by forming a dummy cell array at the central section of a memory cell array and electrically connecting conductive plates for a capacitance element for storing informations in the memory cell array and the capacitance element for deciding informations in the dummy cell array. CONSTITUTION:Conductive plates 10 are shaped to the main surface sections of semiconductor substrates 1 in forming regions for capacitance elements for storing informations and capacitance elements for deciding informations, and constitute the capacitance elements for storing informations in memory cells and the capacitance elements for deciding informations in dummy cells together with a semiconductor substrate 8 and a first insulating film. The conductive plates 10 are unified between adjacent memory cells, and constituted as common electrodes in memory cell arrays 2, and unified between adjacent dummy cells and constituted as common electrodes in dummy cell arrays 3. Opening sections are formed in MISFET forming regions, etc. for a clear in the conductive plates 10, and the conductive plates are united by the memory cell arrays 2 and the dummy cell arrays 3 and connected electrically. |
