METHOD AND APPARATUS FOR FABRICATING DEVICES WITH DC BIAS-CONTROLLED REACTIVE ION ETCHING

摘要

METHOD AND APPARATUS FOR FABRICATING DEVICES WITH DC BIAS-CONTROLLED REACTIVE ION ETCHING A method and apparatus for fabricating a device is disclosed, which involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.