PROCEDE DE DEPOT D'AU MOINS UNE COUCHE D'UN COMPOSE HOMOGENE III-V OU II-VI, EN PARTICULIER GA AS ET SUBSTRAT REVETU D'UN TEL DEPOT

摘要

Method for depositing on a substrate at least one layer of a homogeneous compound, particularly binary, of elements of families III and V or II and VI, particularly Ga and As. The substrate (4) is arranged facing a negatively polarised electrode (2) in a vacuum chamber (1a) wherein the total pressure is comprised between 10<-2> and 10<3> pascals. The electrode is coated with one of the elements of the compound to be deposited, particularly pure gallium, and a gas mixture comprised of a neutral gas and at least a reactive gas containing the other element of the compound, particularly arsenic in arsenic hydrate form is supplied into the vacuum chamber. The partial pressure of the reactive gas is selected so as to be weak with respect to the partial pressure of the neutral gas, the ratio of said pressures being comprised between 10<-5> and 3x10<-1>.