| 摘要 |
An InP MESFET having a semiconductor surface barrier layer (6) formed of GaInP or AlInP. The semiconductor surface barrier layer is formed between an active layer (4) and a gate electrode (8) and the barrier height of the gate for the semiconductor surface barrier layer is higher than the barrier height of the gate for InP. In a method of forming an InP MESFET according to the present invention, the semiconductor surface barrier layer is formed by high dose implantation of Ga or Al into the active region. Surface barrier layers formed of other compounds, for example GaInAsP or AlInAsP, which have a lattice match with InP can be formed by other methods such as epitaxial growth. |
